Stock: 529
Distributor: 128
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2880 | ₹ 500.62 | ₹ 14,41,785.60 |
| 1440 | ₹ 529.60 | ₹ 7,62,624.00 |
| 500 | ₹ 563.12 | ₹ 2,81,560.00 |
| 200 | ₹ 596.65 | ₹ 1,19,330.00 |
| 100 | ₹ 625.06 | ₹ 62,506.00 |
| 50 | ₹ 681.88 | ₹ 34,094.00 |
| 10 | ₹ 772.80 | ₹ 7,728.00 |
| 1 | ₹ 1,039.87 | ₹ 1,039.87 |
Stock: 529
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 500 | ₹ 575.83 | ₹ 2,87,915.00 |
| 200 | ₹ 614.10 | ₹ 1,22,820.00 |
| 100 | ₹ 639.91 | ₹ 63,991.00 |
| 50 | ₹ 698.65 | ₹ 34,932.50 |
| 10 | ₹ 794.77 | ₹ 7,947.70 |
| 5 | ₹ 1,068.00 | ₹ 5,340.00 |
Stock: 1080
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1080 | ₹ 802.11 | ₹ 8,66,278.80 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 6 N-Channel (3-Phase Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 5A | |
| Max On-State Resistance | 1.4Ohm @ 2.5A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 770pF @ 10V | |
| Maximum Power Handling | 4W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP | |
| Vendor Package Type | 12-SIP |
Description
Provided in a setup characterized as 6 N-Channel (3-Phase Bridge). Supports a continuous drain current (Id) of 5A at 25°C. Supports Vdss drain-to-source voltage rated at 500V. The highest input capacitance is 770pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 770pF @ 10V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 12-SIP providing mechanical and thermal shielding. Enclosure type 12-SIP ensuring device integrity. Peak power 4W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 1.4Ohm @ 2.5A, 10V for MOSFET criteria. Manufacturer package type 12-SIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
