Description

Provided in a setup characterized as 2 N-Channel (Half Bridge). Supports a continuous drain current (Id) of 20A at 25°C. Supports Vdss drain-to-source voltage rated at 25V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 6.2nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 6.2nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 920pF @ 12.5V at Vds for safeguarding the device. The input capacitance is rated at 920pF @ 12.5V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerLDFN providing mechanical and thermal shielding. Enclosure type 8-LSON (3.3x3.3) ensuring device integrity. Peak power 6W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 6.2nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 9.6mOhm @ 14A, 8V for MOSFET criteria. Product or component classification series NexFET™. Manufacturer package type 8-LSON (3.3x3.3) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2.1V @ 250µA for MOSFET threshold level.