SI7216DN-T1-E3

SI7216DN-T1-E3
Attribute
Description
Manufacturer Part Number
SI7216DN-T1-E3
Manufacturer
Description
MOSFET 2N-CH 40V 6A PPAK 1212
Note : GST will not be applied to orders shipping outside of India

Stock:
7200

Distributor: 145

Lead Time: Not specified

Quantity Unit Price Ext. Price
535 ₹ 57.96 ₹ 31,008.60
400 ₹ 64.64 ₹ 25,856.00
310 ₹ 66.87 ₹ 20,729.70
225 ₹ 69.10 ₹ 15,547.50
145 ₹ 71.33 ₹ 10,342.85
60 ₹ 86.93 ₹ 5,215.80

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 40V
Continuous Drain Current at 25C 6A
Max On-State Resistance 32mOhm @ 5A, 10V
Max Threshold Gate Voltage 3V @ 250µA
Max Gate Charge at Vgs 19nC @ 10V
Max Input Cap at Vds 670pF @ 20V
Maximum Power Handling 20.8W
Ambient Temp Range -50°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style PowerPAK® 1212-8 Dual
Vendor Package Type PowerPAK® 1212-8 Dual

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 6A at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Guarantees maximum 19nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 19nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 670pF @ 20V at Vds for safeguarding the device. The input capacitance is rated at 670pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -50°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case PowerPAK® 1212-8 Dual providing mechanical and thermal shielding. Enclosure type PowerPAK® 1212-8 Dual ensuring device integrity. Peak power 20.8W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 19nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 32mOhm @ 5A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type PowerPAK® 1212-8 Dual for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 3V @ 250µA for MOSFET threshold level.

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