Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual) Common Drain. Supports a continuous drain current (Id) of 60A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Guarantees maximum 53nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 53nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2700pF @ 15V at Vds for safeguarding the device. The input capacitance is rated at 2700pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case PowerPAK® 1212-8SCD Dual providing mechanical and thermal shielding. Enclosure type PowerPAK® 1212-8SCD Dual ensuring device integrity. Peak power 69.4W (Tc) for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 53nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5mOhm @ 10A, 10V for MOSFET criteria. Product or component classification series TrenchFET® Gen IV. Manufacturer package type PowerPAK® 1212-8SCD Dual for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 2.1V @ 250µA for MOSFET threshold level.