SI1988DH-T1-E3
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 1.3A | |
| Max On-State Resistance | 168mOhm @ 1.4A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 4.1nC @ 8V | |
| Max Input Cap at Vds | 110pF @ 10V | |
| Maximum Power Handling | 1.25W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-TSSOP, SC-88, SOT-363 | |
| Vendor Package Type | SC-70-6 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 1.3A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 4.1nC @ 8V gate charge at Vgs for enhanced switching efficiency. Upholds 4.1nC @ 8V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 110pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 110pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 6-TSSOP, SC-88, SOT-363 providing mechanical and thermal shielding. Enclosure type SC-70-6 ensuring device integrity. Peak power 1.25W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 4.1nC @ 8V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 168mOhm @ 1.4A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type SC-70-6 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
