SQJB80EP-T1_GE3

SQJB80EP-T1_GE3
Attribute
Description
Manufacturer Part Number
SQJB80EP-T1_GE3
Manufacturer
Description
MOSFET 2N-CH 80V 30A PPAK SO8
Note : GST will not be applied to orders shipping outside of India

Stock:
3000

Distributor: 113

Lead Time: Not specified

Quantity Unit Price Ext. Price
3000 ₹ 63.55 ₹ 1,90,650.00
6000 ₹ 62.92 ₹ 3,77,520.00
9000 ₹ 62.30 ₹ 5,60,700.00
12000 ₹ 62.30 ₹ 7,47,600.00
15000 ₹ 61.05 ₹ 9,15,750.00

Stock:
6000

Distributor: 157

Lead Time: Not specified


Quantity Unit Price Ext. Price
6000 ₹ 69.83 ₹ 4,18,980.00
3000 ₹ 75.65 ₹ 2,26,950.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 80V
Continuous Drain Current at 25C 30A (Tc)
Max On-State Resistance 19mOhm @ 8A, 10V
Max Threshold Gate Voltage 2.5V @ 250µA
Max Gate Charge at Vgs 32nC @ 10V
Max Input Cap at Vds 1400pF @ 25V
Maximum Power Handling 48W
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level Automotive
Certification Qualification AEC-Q101
Attachment Mounting Style Surface Mount
Component Housing Style PowerPAK® SO-8 Dual
Vendor Package Type PowerPAK® SO-8 Dual

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 30A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 80V. Guarantees maximum 32nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 32nC @ 10V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 1400pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 1400pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case PowerPAK® SO-8 Dual providing mechanical and thermal shielding. Enclosure type PowerPAK® SO-8 Dual ensuring device integrity. Peak power 48W for device protection. Product condition Active for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 32nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 19mOhm @ 8A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type PowerPAK® SO-8 Dual for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.

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