XP2530AGY

XP2530AGY
Attribute
Description
Manufacturer Part Number
XP2530AGY
Manufacturer
Description
MOSFET N/P-CH 30V 3.3A SOT26
Note : GST will not be applied to orders shipping outside of India

Stock:
3000

Distributor: 122

Lead Time: Not specified

Quantity Unit Price Ext. Price
30000 ₹ 41.90 ₹ 12,57,000.00
15000 ₹ 42.35 ₹ 6,35,250.00
12000 ₹ 42.78 ₹ 5,13,360.00
9000 ₹ 43.23 ₹ 3,89,070.00
6000 ₹ 43.66 ₹ 2,61,960.00
3000 ₹ 44.11 ₹ 1,32,330.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 3.3A (Ta), 2.3A (Ta)
Max On-State Resistance 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V
Max Threshold Gate Voltage 3V @ 250µA
Max Gate Charge at Vgs 4.5nC @ 4.5V
Max Input Cap at Vds 320pF @ 15V, 260pF @ 15V
Maximum Power Handling 1.136W (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style SOT-23-6
Vendor Package Type SOT-26

Description

Provided in a setup characterized as N and P-Channel. Supports a continuous drain current (Id) of 3.3A (Ta), 2.3A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Guarantees maximum 4.5nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 4.5nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 320pF @ 15V, 260pF @ 15V at Vds for safeguarding the device. The input capacitance is rated at 320pF @ 15V, 260pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case SOT-23-6 providing mechanical and thermal shielding. Enclosure type SOT-26 ensuring device integrity. Peak power 1.136W (Ta) for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 4.5nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V for MOSFET criteria. Manufacturer package type SOT-26 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 3V @ 250µA for MOSFET threshold level.

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