XP3832CMT

XP3832CMT
Attribute
Description
Manufacturer Part Number
XP3832CMT
Manufacturer
Description
MOSFET 2N-CH 30V 16A PMPAK
Note : GST will not be applied to orders shipping outside of India

Stock:
3000

Distributor: 122

Lead Time: Not specified

Quantity Unit Price Ext. Price
6000 ₹ 49.12 ₹ 2,94,720.00
3000 ₹ 50.24 ₹ 1,50,720.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)
Max On-State Resistance 5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V
Max Threshold Gate Voltage 2.2V @ 250µA
Max Gate Charge at Vgs 30.4nC @ 10V
Max Input Cap at Vds 1712pF @ 15V, 3920pF @ 15V
Maximum Power Handling 2.08W (Ta), 2.27W (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerLDFN
Vendor Package Type PMPAK® 5 x 6

Description

Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Guarantees maximum 30.4nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 30.4nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1712pF @ 15V, 3920pF @ 15V at Vds for safeguarding the device. The input capacitance is rated at 1712pF @ 15V, 3920pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerLDFN providing mechanical and thermal shielding. Enclosure type PMPAK® 5 x 6 ensuring device integrity. Peak power 2.08W (Ta), 2.27W (Ta) for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 30.4nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V for MOSFET criteria. Manufacturer package type PMPAK® 5 x 6 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold level.

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