Attribute
Description
Manufacturer Part Number
2N5655
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
500mA,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 500mA | |
| Max Collector-Emitter Breakdown | 250V | |
| Vce Saturation (Max) @ Ib, Ic | 10V @ 100mA, 500mA | |
| Collector Cutoff Max | 100µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 10mV | |
| Maximum Power Handling | 20W | |
| Transition Freq | 10MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 100µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 500mA. Offers a collector cutoff current rated at 100µA. Features a DC current gain hFE at Ic evaluated at 10V @ 100mA, 500mA. Offers 10MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 20W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10V @ 100mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 250V.
