SMA6511
Data Sheet
Attribute
Description
Manufacturer Part Number
SMA6511
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
4 NPN,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 4 NPN, 1 PNP Darlington | |
| Maximum Collector Amps | 1.5A, 3A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A | |
| Collector Cutoff Max | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 4V | |
| Maximum Power Handling | 4W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP, Exposed Tab |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 1.5A, 3A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.5V @ 2mA, 1A. Mounting style Through Hole for structural integrity. Enclosure/case 12-SIP, Exposed Tab providing mechanical and thermal shielding. Peak power 4W for device protection. Type of transistor 4 NPN, 1 PNP Darlington for circuit architecture. Peak Vce(on) at Vge 1.5V @ 2mA, 1A for transistor parameters. Highest collector-emitter breakdown voltage 60V.