2STN1360

2STN1360
Attribute
Description
Manufacturer Part Number
2STN1360
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 3A, 60V
Note : GST will not be applied to orders shipping outside of India

Stock:
8667

Distributor: 142

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 69.42 ₹ 69.42
10 ₹ 43.61 ₹ 436.10
100 ₹ 28.48 ₹ 2,848.00
500 ₹ 21.36 ₹ 10,680.00

Stock:
8667

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 71.20 ₹ 71.20
10 ₹ 44.14 ₹ 441.40
100 ₹ 28.57 ₹ 2,857.00
500 ₹ 21.80 ₹ 10,900.00
1000 ₹ 19.58 ₹ 19,580.00
2000 ₹ 16.82 ₹ 33,640.00
5000 ₹ 15.13 ₹ 75,650.00
10000 ₹ 14.51 ₹ 1,45,100.00
25000 ₹ 13.26 ₹ 3,31,500.00

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 3A
Max Collector-Emitter Breakdown 60V
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 3A
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A, 2V
Maximum Power Handling 1.6W
Transition Freq 130MHz
Attachment Mounting Style Surface Mount
Component Housing Style TO-261-4, TO-261AA

Description

Provides a maximum collector current (Ic) of 3A. Features a DC current gain hFE at Ic evaluated at 500mV @ 150mA, 3A. Offers 130MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Peak power 1.6W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 150mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 60V.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.