STN83003

STN83003
Attribute
Description
Manufacturer Part Number
STN83003
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 1.5A,...
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Stock:
7671

Distributor: 145

Lead Time: Not specified

Quantity Unit Price Ext. Price
1910 ₹ 14.00 ₹ 26,740.00
1530 ₹ 14.58 ₹ 22,307.40
1175 ₹ 15.17 ₹ 17,824.75
820 ₹ 16.33 ₹ 13,390.60
530 ₹ 16.91 ₹ 8,962.30
250 ₹ 18.08 ₹ 4,520.00

Stock:
6629

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 74.76 ₹ 74.76
10 ₹ 45.39 ₹ 453.90
100 ₹ 30.26 ₹ 3,026.00
500 ₹ 23.14 ₹ 11,570.00

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 1.5A
Max Collector-Emitter Breakdown 400V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 500mA
Collector Cutoff Max 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 16 @ 350mA, 5V
Maximum Power Handling 1.6W
Transition Freq -
Attachment Mounting Style Surface Mount
Component Housing Style TO-261-4, TO-261AA

Description

Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 1.5A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 500mV @ 100mA, 500mA. Mounting style Surface Mount for structural integrity. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Peak power 1.6W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 100mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 400V.

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