2STN2540

2STN2540
Attribute
Description
Manufacturer Part Number
2STN2540
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 5A, 40V
Note : GST will not be applied to orders shipping outside of India

Stock:
44000

Distributor: 116

Lead Time: Not specified

Quantity Unit Price Ext. Price
1000 ₹ 13.94 ₹ 13,940.00

Stock:
320

Distributor: 11

Lead Time: Not specified


Quantity Unit Price Ext. Price
3000 ₹ 18.24 ₹ 54,720.00
2000 ₹ 19.31 ₹ 38,620.00
1000 ₹ 21.36 ₹ 21,360.00
500 ₹ 23.76 ₹ 11,880.00
200 ₹ 27.59 ₹ 5,518.00
100 ₹ 30.97 ₹ 3,097.00
10 ₹ 47.62 ₹ 476.20
1 ₹ 76.54 ₹ 76.54

Stock:
1000

Distributor: 130

Lead Time: Not specified


Quantity Unit Price Ext. Price
1000 ₹ 18.29 ₹ 18,290.00
3000 ₹ 16.75 ₹ 50,250.00

Stock:
5000

Distributor: 113

Lead Time: Not specified


Quantity Unit Price Ext. Price
5000 ₹ 29.28 ₹ 1,46,400.00
3000 ₹ 28.66 ₹ 85,980.00
4000 ₹ 28.66 ₹ 1,14,640.00
10000 ₹ 28.04 ₹ 2,80,400.00
15000 ₹ 27.41 ₹ 4,11,150.00

Stock:
5420

Distributor: 58

Lead Time: Not specified


Quantity Unit Price Ext. Price
800 ₹ 31.62 ₹ 25,296.00
600 ₹ 36.37 ₹ 21,822.00
400 ₹ 41.08 ₹ 16,432.00
40 ₹ 45.83 ₹ 1,833.20

Stock:
12723

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 79.21 ₹ 79.21
10 ₹ 49.84 ₹ 498.40
100 ₹ 32.04 ₹ 3,204.00
500 ₹ 24.92 ₹ 12,460.00

Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 5A
Max Collector-Emitter Breakdown 40V
Vce Saturation (Max) @ Ib, Ic 450mV @ 500mA, 5A
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A, 2V
Maximum Power Handling 1.6W
Transition Freq -
Attachment Mounting Style Surface Mount
Component Housing Style TO-261-4, TO-261AA

Description

Provides a maximum collector current (Ic) of 5A. Features a DC current gain hFE at Ic evaluated at 450mV @ 500mA, 5A. Mounting style Surface Mount for structural integrity. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Peak power 1.6W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 450mV @ 500mA, 5A for transistor parameters. Highest collector-emitter breakdown voltage 40V.

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