BDW93CFP

BDW93CFP

Data Sheet

Attribute
Description
Manufacturer Part Number
BDW93CFP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note : GST will not be applied to orders shipping outside of India

Stock:
45

Distributor: 121

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 196.87 ₹ 196.87
10 ₹ 75.60 ₹ 756.00
100 ₹ 70.10 ₹ 7,010.00
500 ₹ 61.35 ₹ 30,675.00
1000 ₹ 58.21 ₹ 58,210.00
5000 ₹ 53.93 ₹ 2,69,650.00

Product Attributes

Type Description
Category
Transistor Class NPN - Darlington
Maximum Collector Amps 12A
Max Collector-Emitter Breakdown 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Collector Cutoff Max 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 5A, 3V
Maximum Power Handling 33W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 12A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 3V @ 100mA, 10A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 33W for device protection. Type of transistor NPN - Darlington for circuit architecture. Peak Vce(on) at Vge 3V @ 100mA, 10A for transistor parameters. Highest collector-emitter breakdown voltage 100V.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.