TIP115

TIP115
Attribute
Description
Manufacturer Part Number
TIP115
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note : GST will not be applied to orders shipping outside of India

Stock:
174

Distributor: 130

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 95.69 ₹ 95.69
10 ₹ 44.43 ₹ 444.30
100 ₹ 39.39 ₹ 3,939.00
500 ₹ 30.50 ₹ 15,250.00
1000 ₹ 25.72 ₹ 25,720.00
5000 ₹ 22.56 ₹ 1,12,800.00

Stock:
2083

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 97.90 ₹ 97.90
10 ₹ 45.39 ₹ 453.90
100 ₹ 40.05 ₹ 4,005.00
500 ₹ 31.15 ₹ 15,575.00

Product Attributes

Type Description
Category
Transistor Class PNP - Darlington
Maximum Collector Amps 2A
Max Collector-Emitter Breakdown 60V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Collector Cutoff Max 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V
Maximum Power Handling 2W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Measures resistance at forward current 2mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 2A. Offers a collector cutoff current rated at 2mA. Features a DC current gain hFE at Ic evaluated at 2.5V @ 8mA, 2A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 2.5V @ 8mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 60V.

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