Attribute
Description
Manufacturer Part Number
MS2322
Manufacturer
Description
TRANS RF BIPO 87.5W 1.5A M115
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 65V | |
| Transition Freq | 1.025GHz ~ 1.15GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 10dB | |
| Maximum Power Handling | 87.5W | |
| DC Current Gain (hFE) @ Ic, Vce | 10 @ 100mA, 5V | |
| Maximum Collector Amps | 1.5A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.025GHz ~ 1.15GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 1.5A. Features a DC current gain hFE at Ic evaluated at 10 @ 100mA, 5V. Offers 1.025GHz ~ 1.15GHz transition frequency for seamless signal modulation. Delivers 10dB gain to improve signal amplification efficiency. Peak power 87.5W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10dB for transistor parameters. Highest collector-emitter breakdown voltage 65V.