SD1536-03
Data Sheet
Attribute
Description
Manufacturer Part Number
SD1536-03
Manufacturer
Description
TRANS RF BIPO 292W 10A M115
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 65V | |
| Transition Freq | 1.025GHz ~ 1.15GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 8.4dB | |
| Maximum Power Handling | 292W | |
| DC Current Gain (hFE) @ Ic, Vce | 5 @ 100mA, 5V | |
| Maximum Collector Amps | 10A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.025GHz ~ 1.15GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 10A. Features a DC current gain hFE at Ic evaluated at 5 @ 100mA, 5V. Offers 1.025GHz ~ 1.15GHz transition frequency for seamless signal modulation. Delivers 8.4dB gain to improve signal amplification efficiency. Peak power 292W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8.4dB for transistor parameters. Highest collector-emitter breakdown voltage 65V.