2N2857
Data Sheet
Attribute
Description
Manufacturer Part Number
2N2857
Manufacturer
Description
TRANS RF BIPO NPN 15V 40MA TO72
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 15V | |
| Transition Freq | 500MHz | |
| Noise Figure @ f | 4.5dB @ 450MHz | |
| Amplification Factor | 12.5dB ~ 21dB @ 450MHz | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 30 @ 3mA, 1V | |
| Maximum Collector Amps | 40mA | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-72 |
Description
Measures resistance at forward current 500MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 40mA. Features a DC current gain hFE at Ic evaluated at 30 @ 3mA, 1V. Offers 500MHz transition frequency for seamless signal modulation. Delivers 12.5dB ~ 21dB @ 450MHz gain to improve signal amplification efficiency. Mounting style Through Hole for structural integrity. Enclosure/case TO-72 providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 12.5dB ~ 21dB @ 450MHz for transistor parameters. Highest collector-emitter breakdown voltage 15V.