BFY90
Data Sheet
Attribute
Description
Manufacturer Part Number
BFY90
Manufacturer
Description
TRANS RF NPN 200MW 50MA TO72
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 15V | |
| Transition Freq | 1.3GHz | |
| Noise Figure @ f | 2.5dB ~ 5dB @ 500MHz | |
| Amplification Factor | 20dB | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 20 @ 25mA, 1V | |
| Maximum Collector Amps | 50mA | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-206AF, TO-72-4 Metal Can |
Description
Measures resistance at forward current 1.3GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 50mA. Features a DC current gain hFE at Ic evaluated at 20 @ 25mA, 1V. Offers 1.3GHz transition frequency for seamless signal modulation. Delivers 20dB gain to improve signal amplification efficiency. Mounting style Through Hole for structural integrity. Enclosure/case TO-206AF, TO-72-4 Metal Can providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 20dB for transistor parameters. Highest collector-emitter breakdown voltage 15V.