2N5031
Data Sheet
Attribute
Description
Manufacturer Part Number
2N5031
Manufacturer
Description
TRANS RF NPN 200MW 20MA TO72
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 10V | |
| Transition Freq | 400MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 12dB @ 400MHz | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 25 @ 1mA, 6V | |
| Maximum Collector Amps | 20mA | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-206AF, TO-72-4 Metal Can |
Description
Measures resistance at forward current 400MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 20mA. Features a DC current gain hFE at Ic evaluated at 25 @ 1mA, 6V. Offers 400MHz transition frequency for seamless signal modulation. Delivers 12dB @ 400MHz gain to improve signal amplification efficiency. Mounting style Through Hole for structural integrity. Enclosure/case TO-206AF, TO-72-4 Metal Can providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 12dB @ 400MHz for transistor parameters. Highest collector-emitter breakdown voltage 10V.