Attribute
Description
Manufacturer Part Number
MS2203
Manufacturer
Description
TRANS RF BIPO 5W 300MA M220
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 20V | |
| Transition Freq | 1.09GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 10.8dB ~ 12.3dB | |
| Maximum Power Handling | 5W | |
| DC Current Gain (hFE) @ Ic, Vce | 120 @ 100mA, 5V | |
| Maximum Collector Amps | 300mA | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.09GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 300mA. Features a DC current gain hFE at Ic evaluated at 120 @ 100mA, 5V. Offers 1.09GHz transition frequency for seamless signal modulation. Delivers 10.8dB ~ 12.3dB gain to improve signal amplification efficiency. Peak power 5W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10.8dB ~ 12.3dB for transistor parameters. Highest collector-emitter breakdown voltage 20V.