SD1224

SD1224

Data Sheet

Attribute
Description
Manufacturer Part Number
SD1224
Description
TRANS RF BIPO 60W 5A M135
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 35V
Transition Freq 175MHz
Noise Figure @ f -
Amplification Factor 7.6dB
Maximum Power Handling 60W
DC Current Gain (hFE) @ Ic, Vce 20 @ 500mA, 5V
Maximum Collector Amps 5A
Attachment Mounting Style -
Component Housing Style -

Description

Measures resistance at forward current 175MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 5A. Features a DC current gain hFE at Ic evaluated at 20 @ 500mA, 5V. Offers 175MHz transition frequency for seamless signal modulation. Delivers 7.6dB gain to improve signal amplification efficiency. Peak power 60W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 7.6dB for transistor parameters. Highest collector-emitter breakdown voltage 35V.

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