Attribute
Description
Manufacturer Part Number
MS1402
Manufacturer
Description
TRANS RF BIPO 5W 750MA M122
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 16V | |
| Transition Freq | 450MHz ~ 512MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 10dB | |
| Maximum Power Handling | 5W | |
| DC Current Gain (hFE) @ Ic, Vce | 20 @ 100mA, 5V | |
| Maximum Collector Amps | 750mA | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 450MHz ~ 512MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 750mA. Features a DC current gain hFE at Ic evaluated at 20 @ 100mA, 5V. Offers 450MHz ~ 512MHz transition frequency for seamless signal modulation. Delivers 10dB gain to improve signal amplification efficiency. Peak power 5W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10dB for transistor parameters. Highest collector-emitter breakdown voltage 16V.