ALD1102PAL

ALD1102PAL
Attribute
Description
Manufacturer Part Number
ALD1102PAL
Description
MOSFET 2P-CH 10.6V 8PDIP
Note : GST will not be applied to orders shipping outside of India

Stock:
14

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
500 ₹ 400.50 ₹ 2,00,250.00
100 ₹ 447.18 ₹ 44,718.00
50 ₹ 484.77 ₹ 24,238.50
1 ₹ 874.87 ₹ 874.87

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 P-Channel (Dual) Matched Pair
Transistor Special Function -
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C -
Max On-State Resistance 270Ohm @ 5V
Max Threshold Gate Voltage 1.2V @ 10µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 10pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 8-DIP (0.300", 7.62mm)
Vendor Package Type 8-PDIP

Description

Provided in a setup characterized as 2 P-Channel (Dual) Matched Pair. Supports Vdss drain-to-source voltage rated at 10.6V. The highest input capacitance is 10pF @ 5V at Vds for safeguarding the device. The input capacitance is rated at 10pF @ 5V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 0°C ~ 70°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 8-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Enclosure type 8-PDIP ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 270Ohm @ 5V for MOSFET criteria. Manufacturer package type 8-PDIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1.2V @ 10µA for MOSFET threshold level.

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