ALD1105PBL

ALD1105PBL
Attribute
Description
Manufacturer Part Number
ALD1105PBL
Description
MOSFET 2N/2P-CH 10.6V 14PDIP
Note : GST will not be applied to orders shipping outside of India

Stock:
692

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
500 ₹ 289.25 ₹ 1,44,625.00
100 ₹ 339.56 ₹ 33,956.00
50 ₹ 369.83 ₹ 18,491.50
1 ₹ 683.52 ₹ 683.52

Stock:
215

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 679.96 ₹ 679.96
10 ₹ 370.24 ₹ 3,702.40
100 ₹ 369.35 ₹ 36,935.00
500 ₹ 289.25 ₹ 1,44,625.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N and 2 P-Channel Matched Pair
Transistor Special Function -
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C -
Max On-State Resistance 500Ohm @ 5V
Max Threshold Gate Voltage 1V @ 1µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 3pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 14-DIP (0.300", 7.62mm)
Vendor Package Type 14-PDIP

Description

Provided in a setup characterized as 2 N and 2 P-Channel Matched Pair. Supports Vdss drain-to-source voltage rated at 10.6V. The highest input capacitance is 3pF @ 5V at Vds for safeguarding the device. The input capacitance is rated at 3pF @ 5V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 0°C ~ 70°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 14-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Enclosure type 14-PDIP ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 500Ohm @ 5V for MOSFET criteria. Manufacturer package type 14-PDIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1V @ 1µA for MOSFET threshold level.

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