ALD212914SAL
Data Sheet
Stock: 50
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50 | ₹ 458.76 | ₹ 22,938.00 |
Stock: 32
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 831.26 | ₹ 831.26 |
| 10 | ₹ 550.91 | ₹ 5,509.10 |
| 100 | ₹ 458.35 | ₹ 45,835.00 |
| 1000 | ₹ 430.76 | ₹ 4,30,760.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | EPAD®, Zero Threshold™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) Matched Pair | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 10.6V | |
| Continuous Drain Current at 25C | 80mA | |
| Max On-State Resistance | - | |
| Max Threshold Gate Voltage | 20mV @ 10µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | - | |
| Maximum Power Handling | 500mW | |
| Ambient Temp Range | - | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SOIC |
Description
Provided in a setup characterized as 2 N-Channel (Dual) Matched Pair. Supports a continuous drain current (Id) of 80mA at 25°C. Supports Vdss drain-to-source voltage rated at 10.6V. Provides FET characteristics categorized as Logic Level Gate. Mounting style Surface Mount for structural integrity. Enclosure Tube for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Product or component classification series EPAD®, Zero Threshold™. Manufacturer package type 8-SOIC for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 20mV @ 10µA for MOSFET threshold level.
