Stock: 3
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 132.61 | ₹ 132.61 |
| 10 | ₹ 86.51 | ₹ 865.10 |
| 100 | ₹ 59.27 | ₹ 5,927.00 |
| 500 | ₹ 47.97 | ₹ 23,985.00 |
| 1000 | ₹ 44.14 | ₹ 44,140.00 |
| 5000 | ₹ 37.11 | ₹ 1,85,550.00 |
| 10000 | ₹ 36.93 | ₹ 3,69,300.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 150V | |
| Continuous Drain Current at 25C | 21A (Tc) | |
| Max On-State Resistance | 52 mOhm @ 18A, 10V | |
| Max Threshold Gate Voltage | 4V @ 35µA | |
| Gate Charge at Vgs | 12nC @ 10V | |
| Input Cap at Vds | 890pF @ 75V | |
| Maximum Power Handling | 57W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 21A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 150V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 12nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 890pF @ 75V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 57W for device protection. Peak Rds(on) at Id 12nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 52 mOhm @ 18A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 35µA for MOSFET threshold level.
