IRF6622TRPBF
Data Sheet
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 15A (Ta), 59A (Tc) | |
| Max On-State Resistance | 6.3 mOhm @ 15A, 10V | |
| Max Threshold Gate Voltage | 2.35V @ 25µA | |
| Gate Charge at Vgs | 17nC @ 4.5V | |
| Input Cap at Vds | 1450pF @ 13V | |
| Maximum Power Handling | 2.2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | - |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 15A (Ta), 59A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 25V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 17nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1450pF @ 13V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Peak power 2.2W for device protection. Peak Rds(on) at Id 17nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 6.3 mOhm @ 15A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.35V @ 25µA for MOSFET threshold level.
