Stock: 8521
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 181.56 | ₹ 181.56 |
| 10 | ₹ 116.59 | ₹ 1,165.90 |
| 100 | ₹ 80.28 | ₹ 8,028.00 |
| 500 | ₹ 68.09 | ₹ 34,045.00 |
| 1000 | ₹ 57.85 | ₹ 57,850.00 |
| 5000 | ₹ 49.13 | ₹ 2,45,650.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 17A (Ta), 40A (Tc) | |
| Max On-State Resistance | 4.2 mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 2.8V @ 36µA | |
| Gate Charge at Vgs | 27nC @ 10V | |
| Input Cap at Vds | 2000pF @ 30V | |
| Maximum Power Handling | 2.5W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 17A (Ta), 40A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 27nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2000pF @ 30V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 2.5W for device protection. Peak Rds(on) at Id 27nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.2 mOhm @ 20A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.8V @ 36µA for MOSFET threshold level.
