Stock: 137
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 334.68 | ₹ 33,468.00 |
| 50 | ₹ 346.43 | ₹ 17,321.50 |
| 25 | ₹ 360.16 | ₹ 9,004.00 |
| 19 | ₹ 376.32 | ₹ 7,150.08 |
Stock: 109
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 48 | ₹ 439.13 | ₹ 21,078.24 |
| 14 | ₹ 474.73 | ₹ 6,646.22 |
| 1 | ₹ 712.09 | ₹ 712.09 |
Stock: 180
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 180 | ₹ 627.45 | ₹ 1,12,941.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 4 N-Channel | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 10A | |
| Max On-State Resistance | 80mOhm @ 5A, 10V | |
| Max Threshold Gate Voltage | 2V @ 250mA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 1630pF @ 10V | |
| Maximum Power Handling | 5W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP Exposed Tab | |
| Vendor Package Type | 12-SIP |
Description
Provided in a setup characterized as 4 N-Channel. Supports a continuous drain current (Id) of 10A at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Provides FET characteristics categorized as Logic Level Gate. The highest input capacitance is 1630pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 1630pF @ 10V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 12-SIP Exposed Tab providing mechanical and thermal shielding. Enclosure type 12-SIP ensuring device integrity. Peak power 5W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 80mOhm @ 5A, 10V for MOSFET criteria. Manufacturer package type 12-SIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2V @ 250mA for MOSFET threshold level.
