SLA5068

SLA5068
Attribute
Description
Manufacturer Part Number
SLA5068
Description
MOSFET 6N-CH 60V 7A 15ZIP
Note : GST will not be applied to orders shipping outside of India

Stock:
324

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
180 ₹ 307.24 ₹ 55,303.20
10 ₹ 449.81 ₹ 4,498.10
1 ₹ 663.94 ₹ 663.94

Stock:
1080

Distributor: 111

Lead Time: Not specified


Quantity Unit Price Ext. Price
1000 ₹ 514.09 ₹ 5,14,090.00
500 ₹ 526.99 ₹ 2,63,495.00
250 ₹ 541.73 ₹ 1,35,432.50
100 ₹ 558.67 ₹ 55,867.00
50 ₹ 578.30 ₹ 28,915.00
25 ₹ 601.19 ₹ 15,029.75
12 ₹ 628.19 ₹ 7,538.28

Stock:
864

Distributor: 118

Lead Time: Not specified


Quantity Unit Price Ext. Price
278 ₹ 583.39 ₹ 1,62,182.42
125 ₹ 641.73 ₹ 80,216.25
1 ₹ 1,166.79 ₹ 1,166.79

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 6 N-Channel (3-Phase Bridge)
Transistor Special Function -
Drain-Source Breakdown Volts 60V
Continuous Drain Current at 25C 7A
Max On-State Resistance 100mOhm @ 3.5A, 10V
Max Threshold Gate Voltage 2V @ 250µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 660pF @ 10V
Maximum Power Handling 5W
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 15-SIP Exposed Tab, Formed Leads
Vendor Package Type 15-ZIP

Description

Provided in a setup characterized as 6 N-Channel (3-Phase Bridge). Supports a continuous drain current (Id) of 7A at 25°C. Supports Vdss drain-to-source voltage rated at 60V. The highest input capacitance is 660pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 660pF @ 10V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 15-SIP Exposed Tab, Formed Leads providing mechanical and thermal shielding. Enclosure type 15-ZIP ensuring device integrity. Peak power 5W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 100mOhm @ 3.5A, 10V for MOSFET criteria. Manufacturer package type 15-ZIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.

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