Stock: 1080
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1080 | ₹ 598.52 | ₹ 6,46,401.60 |
Stock: 1080
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 671.59 | ₹ 6,71,590.00 |
| 500 | ₹ 688.30 | ₹ 3,44,150.00 |
| 250 | ₹ 707.68 | ₹ 1,76,920.00 |
| 100 | ₹ 730.34 | ₹ 73,034.00 |
| 50 | ₹ 757.03 | ₹ 37,851.50 |
| 25 | ₹ 788.77 | ₹ 19,719.25 |
| 9 | ₹ 826.95 | ₹ 7,442.55 |
Stock: 864
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 419 | ₹ 797.53 | ₹ 3,34,165.07 |
| 192 | ₹ 850.70 | ₹ 1,63,334.40 |
| 1 | ₹ 1,196.29 | ₹ 1,196.29 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 6 N-Channel (3-Phase Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 250V | |
| Continuous Drain Current at 25C | 7A | |
| Max On-State Resistance | 500mOhm @ 3.5A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 450pF @ 10V | |
| Maximum Power Handling | 4W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP | |
| Vendor Package Type | 12-SIP |
Description
Provided in a setup characterized as 6 N-Channel (3-Phase Bridge). Supports a continuous drain current (Id) of 7A at 25°C. Supports Vdss drain-to-source voltage rated at 250V. The highest input capacitance is 450pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 450pF @ 10V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 12-SIP providing mechanical and thermal shielding. Enclosure type 12-SIP ensuring device integrity. Peak power 4W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 500mOhm @ 3.5A, 10V for MOSFET criteria. Manufacturer package type 12-SIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
