Stock: 1392
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 493 | ₹ 678.45 | ₹ 3,34,475.85 |
| 226 | ₹ 723.68 | ₹ 1,63,551.68 |
| 1 | ₹ 1,017.67 | ₹ 1,017.67 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 3 N and 3 P-Channel (3-Phase Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 10A | |
| Max On-State Resistance | 140mOhm @ 5A, 4V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 460pF @ 10V, 1200pF @ 10V | |
| Maximum Power Handling | 4W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP | |
| Vendor Package Type | 12-SIP |
Description
Provided in a setup characterized as 3 N and 3 P-Channel (3-Phase Bridge). Supports a continuous drain current (Id) of 10A at 25°C. Supports Vdss drain-to-source voltage rated at 60V. The highest input capacitance is 460pF @ 10V, 1200pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 460pF @ 10V, 1200pF @ 10V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 12-SIP providing mechanical and thermal shielding. Enclosure type 12-SIP ensuring device integrity. Peak power 4W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id and Vgs 140mOhm @ 5A, 4V for MOSFET criteria. Manufacturer package type 12-SIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.
