STS5DNF20V

STS5DNF20V
Attribute
Description
Manufacturer Part Number
STS5DNF20V
Manufacturer
Description
MOSFET 2N-CH 20V 5A 8SOIC
Note : GST will not be applied to orders shipping outside of India

Stock:
307

Distributor: 11

Lead Time: Not specified

Quantity Unit Price Ext. Price
250 ₹ 20.03 ₹ 5,007.50
100 ₹ 20.65 ₹ 2,065.00
25 ₹ 21.63 ₹ 540.75
5 ₹ 22.78 ₹ 113.90
1 ₹ 24.03 ₹ 24.03

Stock:
2355

Distributor: 120

Lead Time: Not specified


Quantity Unit Price Ext. Price
735 ₹ 43.39 ₹ 31,891.65
310 ₹ 46.73 ₹ 14,486.30
144 ₹ 53.40 ₹ 7,689.60
43 ₹ 62.58 ₹ 2,690.94
12 ₹ 108.47 ₹ 1,301.64
3 ₹ 166.88 ₹ 500.64

Stock:
28

Distributor: 118

Lead Time: Not specified


Quantity Unit Price Ext. Price
20 ₹ 72.09 ₹ 1,441.80
5 ₹ 96.12 ₹ 480.60
1 ₹ 120.15 ₹ 120.15

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line STripFET™ II
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 5A
Max On-State Resistance 40mOhm @ 2.5A, 4.5V
Max Threshold Gate Voltage 600mV @ 250µA
Max Gate Charge at Vgs 11.5nC @ 4.5V
Max Input Cap at Vds 460pF @ 25V
Maximum Power Handling 2W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOIC

Description

Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 5A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 11.5nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 11.5nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 460pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 460pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 2W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 11.5nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 40mOhm @ 2.5A, 4.5V for MOSFET criteria. Product or component classification series STripFET™ II. Manufacturer package type 8-SOIC for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 600mV @ 250µA for MOSFET threshold level.

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