SI5902DC-T1-E3

SI5902DC-T1-E3
Attribute
Description
Manufacturer Part Number
SI5902DC-T1-E3
Manufacturer
Description
MOSFET 2N-CH 30V 2.9A 1206-8
Note : GST will not be applied to orders shipping outside of India

Stock:
7970

Distributor: 120

Lead Time: Not specified

Quantity Unit Price Ext. Price
1224 ₹ 26.03 ₹ 31,860.72
515 ₹ 28.04 ₹ 14,440.60
239 ₹ 32.04 ₹ 7,657.56
70 ₹ 37.55 ₹ 2,628.50
19 ₹ 65.09 ₹ 1,236.71
5 ₹ 100.13 ₹ 500.65

Stock:
6376

Distributor: 118

Lead Time: Not specified


Quantity Unit Price Ext. Price
4001 ₹ 29.37 ₹ 1,17,509.37
2052 ₹ 33.38 ₹ 68,495.76
1 ₹ 133.50 ₹ 133.50

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 2.9A
Max On-State Resistance 85mOhm @ 2.9A, 10V
Max Threshold Gate Voltage 1V @ 250µA (Min)
Max Gate Charge at Vgs 7.5nC @ 10V
Max Input Cap at Vds -
Maximum Power Handling 1.1W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SMD, Flat Leads
Vendor Package Type 1206-8 ChipFET™

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 2.9A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 7.5nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 7.5nC @ 10V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-SMD, Flat Leads providing mechanical and thermal shielding. Enclosure type 1206-8 ChipFET™ ensuring device integrity. Peak power 1.1W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 7.5nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 85mOhm @ 2.9A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 1206-8 ChipFET™ for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 1V @ 250µA (Min) for MOSFET threshold level.

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