2ST31A

2ST31A
Attribute
Description
Manufacturer Part Number
2ST31A
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 3A, 60V
Note : GST will not be applied to orders shipping outside of India

Stock:
1307

Distributor: 121

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 78.23 ₹ 78.23
10 ₹ 59.48 ₹ 594.80
100 ₹ 51.40 ₹ 5,140.00
500 ₹ 44.00 ₹ 22,000.00
1000 ₹ 40.18 ₹ 40,180.00
5000 ₹ 34.46 ₹ 1,72,300.00

Stock:
1155

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 119.26 ₹ 119.26
10 ₹ 61.41 ₹ 614.10
100 ₹ 54.29 ₹ 5,429.00
500 ₹ 42.72 ₹ 21,360.00

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 3A
Max Collector-Emitter Breakdown 60V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Cutoff Max 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 20mA, 4V
Maximum Power Handling 40W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Measures resistance at forward current 300µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 3A. Offers a collector cutoff current rated at 300µA. Features a DC current gain hFE at Ic evaluated at 1.2V @ 375mA, 3A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 40W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1.2V @ 375mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 60V.

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