Stock: 4026
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 152.19 | ₹ 152.19 |
| 10 | ₹ 97.01 | ₹ 970.10 |
| 100 | ₹ 64.17 | ₹ 6,417.00 |
| 500 | ₹ 50.73 | ₹ 25,365.00 |
| 1000 | ₹ 45.92 | ₹ 45,920.00 |
| 2500 | ₹ 45.21 | ₹ 1,13,025.00 |
| 5000 | ₹ 38.00 | ₹ 1,90,000.00 |
| 10000 | ₹ 37.74 | ₹ 3,77,400.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Schottky, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 25A (Ta), 40A (Tc) | |
| Max On-State Resistance | 2.1 mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 2.2V @ 250µA | |
| Gate Charge at Vgs | 41nC @ 10V | |
| Input Cap at Vds | 2600pF @ 15V | |
| Maximum Power Handling | 69W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Schottky, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 25A (Ta), 40A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Schottky, Metal Oxide. Upholds 41nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2600pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 69W for device protection. Peak Rds(on) at Id 41nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.1 mOhm @ 20A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold level.
