Stock: 23338
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 176.22 | ₹ 176.22 |
| 10 | ₹ 106.80 | ₹ 1,068.00 |
| 100 | ₹ 75.12 | ₹ 7,512.00 |
| 500 | ₹ 60.43 | ₹ 30,215.00 |
| 1000 | ₹ 55.54 | ₹ 55,540.00 |
| 2500 | ₹ 52.78 | ₹ 1,31,950.00 |
| 5000 | ₹ 46.46 | ₹ 2,32,300.00 |
| 10000 | ₹ 46.19 | ₹ 4,61,900.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 120V | |
| Continuous Drain Current at 25C | 8.6A (Ta), 44A (Tc) | |
| Max On-State Resistance | 19 mOhm @ 39A, 10V | |
| Max Threshold Gate Voltage | 4V @ 42µA | |
| Gate Charge at Vgs | 34nC @ 10V | |
| Input Cap at Vds | 2300pF @ 60V | |
| Maximum Power Handling | 69W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 8.6A (Ta), 44A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 120V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 34nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2300pF @ 60V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 69W for device protection. Peak Rds(on) at Id 34nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 19 mOhm @ 39A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 42µA for MOSFET threshold level.
