Attribute
Description
Manufacturer Part Number
MS2201
Manufacturer
Description
TRANS RF BIPO 10W 250MA M220
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 45V | |
| Transition Freq | 1.025GHz ~ 1.15GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 9dB | |
| Maximum Power Handling | 10W | |
| DC Current Gain (hFE) @ Ic, Vce | 0.95 @ 10mA, 5V | |
| Maximum Collector Amps | 250mA | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.025GHz ~ 1.15GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 250mA. Features a DC current gain hFE at Ic evaluated at 0.95 @ 10mA, 5V. Offers 1.025GHz ~ 1.15GHz transition frequency for seamless signal modulation. Delivers 9dB gain to improve signal amplification efficiency. Peak power 10W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 9dB for transistor parameters. Highest collector-emitter breakdown voltage 45V.