MRF586G
Data Sheet
Attribute
Description
Manufacturer Part Number
MRF586G
Manufacturer
Description
TRANS BIPO NPN TO-39
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 17V | |
| Transition Freq | 3GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 13.5dB | |
| Maximum Power Handling | 1W | |
| DC Current Gain (hFE) @ Ic, Vce | 40 @ 50mA, 5V | |
| Maximum Collector Amps | 200mA | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 3GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 200mA. Features a DC current gain hFE at Ic evaluated at 40 @ 50mA, 5V. Offers 3GHz transition frequency for seamless signal modulation. Delivers 13.5dB gain to improve signal amplification efficiency. Peak power 1W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 13.5dB for transistor parameters. Highest collector-emitter breakdown voltage 17V.