Stock: 46116
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 570 | ₹ 47.02 | ₹ 26,801.40 |
| 425 | ₹ 52.44 | ₹ 22,287.00 |
| 330 | ₹ 54.25 | ₹ 17,902.50 |
| 240 | ₹ 56.06 | ₹ 13,454.40 |
| 155 | ₹ 57.86 | ₹ 8,968.30 |
| 65 | ₹ 70.51 | ₹ 4,583.15 |
Stock: 7740
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 4000 | ₹ 57.79 | ₹ 2,31,160.00 |
| 3200 | ₹ 61.82 | ₹ 1,97,824.00 |
| 2400 | ₹ 65.75 | ₹ 1,57,800.00 |
| 250 | ₹ 69.67 | ₹ 17,417.50 |
| 10 | ₹ 73.13 | ₹ 731.30 |
Stock: 31701
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 187.79 | ₹ 187.79 |
| 10 | ₹ 120.15 | ₹ 1,201.50 |
| 100 | ₹ 83.22 | ₹ 8,322.00 |
| 500 | ₹ 70.49 | ₹ 35,245.00 |
| 1000 | ₹ 58.92 | ₹ 58,920.00 |
| 2500 | ₹ 54.38 | ₹ 1,35,950.00 |
| 5000 | ₹ 51.44 | ₹ 2,57,200.00 |
| 10000 | ₹ 51.17 | ₹ 5,11,700.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 37A (Ta), 100A (Tc) | |
| Max On-State Resistance | 1.1 mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 2.2V @ 250µA | |
| Gate Charge at Vgs | 72nC @ 10V | |
| Input Cap at Vds | 4700pF @ 15V | |
| Maximum Power Handling | 96W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 37A (Ta), 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 72nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4700pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 96W for device protection. Peak Rds(on) at Id 72nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.1 mOhm @ 30A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold level.
