Stock: 11560
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 174.44 | ₹ 174.44 |
| 10 | ₹ 111.25 | ₹ 1,112.50 |
| 100 | ₹ 77.07 | ₹ 7,707.00 |
| 500 | ₹ 65.33 | ₹ 32,665.00 |
| 1000 | ₹ 56.96 | ₹ 56,960.00 |
| 5000 | ₹ 48.42 | ₹ 2,42,100.00 |
| 10000 | ₹ 47.62 | ₹ 4,76,200.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 22A (Ta). 40A (Tc) | |
| Max On-State Resistance | 1.9 mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Gate Charge at Vgs | 44nC @ 10V | |
| Input Cap at Vds | 2800pF @ 15V | |
| Maximum Power Handling | 2.1W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 22A (Ta). 40A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 44nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2800pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 2.1W for device protection. Peak Rds(on) at Id 44nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.9 mOhm @ 20A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.
