Stock: 4636
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 49.74 | ₹ 49,74,000.00 |
| 10000 | ₹ 59.37 | ₹ 5,93,700.00 |
| 1000 | ₹ 66.59 | ₹ 66,590.00 |
| 500 | ₹ 72.21 | ₹ 36,105.00 |
| 100 | ₹ 80.23 | ₹ 8,023.00 |
Stock: 558
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 68.98 | ₹ 68,98,000.00 |
| 10000 | ₹ 82.33 | ₹ 8,23,300.00 |
| 1000 | ₹ 92.34 | ₹ 92,340.00 |
| 500 | ₹ 100.13 | ₹ 50,065.00 |
| 300 | ₹ 111.25 | ₹ 33,375.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 75V | |
| Continuous Drain Current at 25C | 75A | |
| Max On-State Resistance | 13 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 40nC @ 10V | |
| Input Cap at Vds | 2644pF @ 25V | |
| Maximum Power Handling | 157W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 75A at 25°C. Supports Vdss drain-to-source voltage rated at 75V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 40nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2644pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 157W for device protection. Peak Rds(on) at Id 40nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 13 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
