Stock: 663
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 75.04 | ₹ 75,04,000.00 |
| 10000 | ₹ 89.89 | ₹ 8,98,900.00 |
| 1000 | ₹ 100.57 | ₹ 1,00,570.00 |
| 500 | ₹ 108.58 | ₹ 54,290.00 |
| 100 | ₹ 121.04 | ₹ 12,104.00 |
Stock: 663
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 83.32 | ₹ 83,32,000.00 |
| 10000 | ₹ 99.68 | ₹ 9,96,800.00 |
| 1000 | ₹ 111.25 | ₹ 1,11,250.00 |
| 500 | ₹ 121.04 | ₹ 60,520.00 |
| 100 | ₹ 134.39 | ₹ 13,439.00 |
Stock: 663
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 104.16 | ₹ 1,04,16,000.00 |
| 10000 | ₹ 124.60 | ₹ 12,46,000.00 |
| 1000 | ₹ 139.06 | ₹ 1,39,060.00 |
| 500 | ₹ 151.30 | ₹ 75,650.00 |
| 199 | ₹ 167.99 | ₹ 33,430.01 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 110V | |
| Continuous Drain Current at 25C | 18A | |
| Max On-State Resistance | 90 mOhm @ 9A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 21nC @ 10V | |
| Input Cap at Vds | 633pF @ 25V | |
| Maximum Power Handling | 79W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 18A at 25°C. Supports Vdss drain-to-source voltage rated at 110V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 21nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 633pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 79W for device protection. Peak Rds(on) at Id 21nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 90 mOhm @ 9A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
