Attribute
Description
Manufacturer Part Number
BUK7516-55A,127
Manufacturer
Description
MOSFET N-CH 55V 65.7A TO220AB
Note :
GST will not be applied to orders shipping outside of India
Stock: 4353
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 45.92 | ₹ 45,92,000.00 |
| 10000 | ₹ 54.82 | ₹ 5,48,200.00 |
| 1000 | ₹ 61.48 | ₹ 61,480.00 |
| 500 | ₹ 66.67 | ₹ 33,335.00 |
| 100 | ₹ 74.07 | ₹ 7,407.00 |
Stock: 4353
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 51.17 | ₹ 51,17,000.00 |
| 10000 | ₹ 61.07 | ₹ 6,10,700.00 |
| 1000 | ₹ 68.50 | ₹ 68,500.00 |
| 500 | ₹ 74.28 | ₹ 37,140.00 |
| 100 | ₹ 82.53 | ₹ 8,253.00 |
Stock: 4076
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 63.96 | ₹ 63,96,000.00 |
| 10000 | ₹ 76.34 | ₹ 7,63,400.00 |
| 1000 | ₹ 85.63 | ₹ 85,630.00 |
| 500 | ₹ 92.85 | ₹ 46,425.00 |
| 324 | ₹ 103.16 | ₹ 33,423.84 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 55V | |
| Continuous Drain Current at 25C | 65.7A | |
| Max On-State Resistance | 16 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 2245pF @ 25V | |
| Maximum Power Handling | 138W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 65.7A at 25°C. Supports Vdss drain-to-source voltage rated at 55V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 2245pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 138W for device protection. Peak Rds(on) at Id and Vgs 16 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
