Stock: 8865
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 71.73 | ₹ 71,73,000.00 |
| 10000 | ₹ 85.62 | ₹ 8,56,200.00 |
| 1000 | ₹ 96.12 | ₹ 96,120.00 |
| 500 | ₹ 104.13 | ₹ 52,065.00 |
| 100 | ₹ 115.70 | ₹ 11,570.00 |
Stock: 780
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 89.67 | ₹ 89,67,000.00 |
| 10000 | ₹ 107.02 | ₹ 10,70,200.00 |
| 1000 | ₹ 120.15 | ₹ 1,20,150.00 |
| 500 | ₹ 130.16 | ₹ 65,080.00 |
| 231 | ₹ 144.63 | ₹ 33,409.53 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 55V | |
| Continuous Drain Current at 25C | 20.3A | |
| Max On-State Resistance | 75 mOhm @ 10A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 11nC @ 10V | |
| Input Cap at Vds | 483pF @ 25V | |
| Maximum Power Handling | 62W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 20.3A at 25°C. Supports Vdss drain-to-source voltage rated at 55V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 11nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 483pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 62W for device protection. Peak Rds(on) at Id 11nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 75 mOhm @ 10A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
