BUK7575-55A,127

BUK7575-55A,127
Attribute
Description
Manufacturer Part Number
BUK7575-55A,127
Manufacturer
Description
MOSFET N-CH 55V 20.3A TO220AB
Note : GST will not be applied to orders shipping outside of India

Stock:
7329

Distributor: 160

Lead Time: Not specified

Quantity Unit Price Ext. Price
100000 ₹ 45.50 ₹ 45,50,000.00
10000 ₹ 54.30 ₹ 5,43,000.00
1000 ₹ 60.90 ₹ 60,900.00
500 ₹ 66.04 ₹ 33,020.00
100 ₹ 73.38 ₹ 7,338.00

Stock:
3638

Distributor: 111

Lead Time: Not specified


Quantity Unit Price Ext. Price
100000 ₹ 56.87 ₹ 56,87,000.00
10000 ₹ 67.87 ₹ 6,78,700.00
1000 ₹ 76.13 ₹ 76,130.00
500 ₹ 82.55 ₹ 41,275.00
364 ₹ 91.72 ₹ 33,386.08

Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 55V
Continuous Drain Current at 25C 20.3A
Max On-State Resistance 75 mOhm @ 10A, 10V
Max Threshold Gate Voltage 4V @ 1mA
Gate Charge at Vgs -
Input Cap at Vds 483pF @ 25V
Maximum Power Handling 62W
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 20.3A at 25°C. Supports Vdss drain-to-source voltage rated at 55V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 483pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 62W for device protection. Peak Rds(on) at Id and Vgs 75 mOhm @ 10A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.

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