Attribute
Description
Manufacturer Part Number
MS1007
Manufacturer
Description
TRANS RF BIPO 233W 10A M174
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 55V | |
| Transition Freq | 30MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 14dB | |
| Maximum Power Handling | 233W | |
| DC Current Gain (hFE) @ Ic, Vce | 18 @ 1.4A, 6V | |
| Maximum Collector Amps | 10A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 30MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 10A. Features a DC current gain hFE at Ic evaluated at 18 @ 1.4A, 6V. Offers 30MHz transition frequency for seamless signal modulation. Delivers 14dB gain to improve signal amplification efficiency. Peak power 233W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 14dB for transistor parameters. Highest collector-emitter breakdown voltage 55V.