MS1202
Data Sheet
Attribute
Description
Manufacturer Part Number
MS1202
Manufacturer
Description
TRANS RF BIPO 15W 1A M135
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 35V | |
| Transition Freq | 118MHz ~ 136MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 8.4dB | |
| Maximum Power Handling | 15W | |
| DC Current Gain (hFE) @ Ic, Vce | 5 @ 100mA, 5V | |
| Maximum Collector Amps | 1A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 118MHz ~ 136MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 5 @ 100mA, 5V. Offers 118MHz ~ 136MHz transition frequency for seamless signal modulation. Delivers 8.4dB gain to improve signal amplification efficiency. Peak power 15W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8.4dB for transistor parameters. Highest collector-emitter breakdown voltage 35V.